Features
Fully automated
Multi-tech XPS / HAXPES
- Easy Operation & Multi-technique Options
- High Performance Large & Micro Area XPS Analysis
- High Speed & Non Destructive Depth Profiling
- Fully Automated with Sample Parking
- Hard X-ray Cr Kα source for HAXPES
- Comprehensive solution for batteries, semiconductors, organic devices and other applications
Ease of Operation
Provides a simple, intuitive, and user-friendly interface (UI). Users can perform not only basic operations with ease, but also automated analyses with optional settings.
Intuitive UI
SmartSoft enables operation of a high-performance XPS system with an intuitive user interface.
Featuring intro photo-based navigation and visualized workflows, including precise analysis point selection using Scanning X-ray Images (SXI), it allows users to complete the entire analytical process within a single screen.
Multi-Technique Options
PHI GENESIS enables comprehensive electronic and chemical characterization of materials by combining XPS with complementary techniques such as HAXPES, UPS/LEIPS, and AES. This integrated approach provides access to a wide range of electronic states, from the valence and conduction bands to core-level orbitals, allowing detailed analysis of the electronic structure, chemical states, and elemental composition of materials.
High Throughput Large Area Analysis
The newly designed high-sensitivity analyzer enables high throughput analysis for both XPS and HAXPES.
Superior Micro Area Spectroscopy
In PHI GENESIS, micro-focused scanning X-ray source is used for intuitive SEM-like navigation using X-ray induced secondary electron images (SXIs). Multi-point small areas can be defined from SXI images with 100% certainty for spectra, depth profiles and maps.
Improved Scanning X-ray Image(SXI)
The unsuppressed 5 µm small spot X-ray beam opens new opportunities for micro-XPS applications.
High Throughput Depth Profiling
PHI GENESIS enables high throughput depth profiling. Micro-focused X-ray source, highly sensitive detector, high-performance Argon ion gun, and high-efficiency dual beam neutralization enable fully automated depth profiling, including multi-point analysis within a single crater.
High sensitivity during depth profiling
Sample: Au ion-implanted Si wafer with as small as 10 ppm Au detected in during depth profiling
Non Destructive Depth Profiling
Using high-energy hard X-ray source, it is possible to obtain information from a deeper depth compared to conventional soft X-ray XPS.
This enables a detailed and unperturbed chemical state analysis of buried interfaces without sputtering.
No-sputter depth probing
Quantum Dots(QDs) with a diameter of approximately 10 to 50 nm are used in a next-generation transparent luminescent materials.
By combining information from same area analysis using XPS (Al Kα X-rays) and HAXPES (Cr Kα X-rays), it is possible to perform detailed depth-resolved structure analysis of QDs.
Combination of XPS and HAXPES allows depth-resolved, quantitative and chemical analysis of nanoparticles, eliminating possible ion beam-induced damage.
List of Application Area
Advanced devices and materials, such as all-solid-state batteries, artificial photosynthesis systems, and quantum communication technologies, require not only improved performance of individual materials but also rapid optimization of material combinations and interfaces. This has created growing demand for advanced analytical capabilities, traditionally available at large synchrotron radiation facilities, in more flexible laboratory environments.
To accelerate such R&D, surface and interface analysis systems must offer not only high fundamental performance but also diverse analytical techniques and advanced automation. ULVAC-PHI has developed PHI GENESIS, a new scanning X-ray photoelectron spectroscopy (XPS) system designed to meet these needs.
PHI GENESIS supports R&D across a wide range of solid materials and devices, including catalysts, IoT devices, motors, tribological materials, bio- and life-science materials, polymers, ceramics, and metals.
Here, we highlight four application areas—semiconductors, batteries, organic devices, and microelectronics—and present examples of analyses using optional capabilities tailored to the specific research needs of each field.
Wide Variety of XPS Options of Research Needs
Battery
“pA-AES Lithium chemical map from LiPON/LiCoO2 cross-section”
Li-based materials, such as LiPON, are sensitive to electron beam irradiation.
High-sensitivity analyzer available at PHI GENESIS enables fast acquisition of AES chemical maps at low beam current (300 pA).
Semiconductors
Semiconductor devices generally consist of complex thin films containing many elements, and their development often requires non-destructive analysis of chemical states at interfaces.
HAXPES is necessary to acquire information from buried interfaces such as GaN under gate oxide film.
Organic Devices
The change of energy band diagram using UPS/LEIPS and Ar-GCIB
(1) C60 film surface
(2) C60 film after surface cleaning.
(3) C60 film /Au interface
(4) Au surface
Energy diagram of organic layers as a function of depth can be determined by combination of UPS/LEIPS and Ar-GCIB depth profiling.
Micro Electronics
Micro-spot solder-ball analysis
The HAXPES data shows a higher percentage of metallic Sn than the XPS data. This is consistent with the formation of surface oxides on the solder ball.
